Silicon substrate manufacture

摘要

A method for manufacturing a silicon single crystal substrate (10) for epitaxial layer growth comprises the steps of: growing a CVD film (11) such as silicon dioxide on a rear surface and a peripheral side portion, of the silicon single crystal substrate (10); removing a portion of the CVD film from the peripheral side portion (10a) in the vicinity of a main surface of the silicon single crystal substrate (10), by abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate (10). Epitaxial layer growth (12) can then take place without disturbance from auto doping.