Method for preventing side-lobes in photolithography

摘要

A method for the mitigation of the generation of side-lobes in a photolithography process is described. The method includes the steps of forming a photoresist layer on a semiconductor substrate. An exposure process is conducted on the photoresist layer with a phase-shifting mask, transferring the pattern of the mask on the photoresist layer. After this, a post-exposure baking process is conducted on the photoresist layer after it has been exposed, followed by performing a development process to complete the patterning of the photoresist layer.