| 发明名称 |
Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone |
| 摘要 |
This invention relates to a method of depositing silicon oxide films on the surface of semiconductor substrates, and more particularly to depositing such films by chemical vapor deposition using alkylsiloxane oligomers precursors with ozone.
|
| 申请公布号 |
US6465044(B1) |
申请公布日期 |
2002.10.15 |
| 申请号 |
US20000542612 |
申请日期 |
2000.04.04 |
| 申请人 |
SILICON VALLEY GROUP, THERMAL SYSTEMS LLP |
发明人 |
JAIN SANJEEV;YUAN ZHENG |
| 分类号 |
C23C16/40;H01L21/316;(IPC1-7):C23C16/00;H01L21/469 |
主分类号 |
C23C16/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
