| 摘要 |
A method for fabricating a capacitor, and a capacitor fabricated employing the method. To practice the method, there is first provided a substrate. In accord with a first embodiment, there is then formed over the substrate a first capacitor electrode plate formed of a first copper containing conductor material. There is then formed upon the first capacitor electrode plate a first barrier layer. There is then formed upon the first barrier layer a capacitor dielectric layer. There is then formed upon the capacitor dielectric layer a second barrier layer. Finally, there is then formed upon the second barrier layer a second capacitor electrode plate formed of a second copper containing conductor material. The method contemplates a capacitor fabricated employing the method. In accord with a second embodiment, a capacitor dielectric material from which is formed the capacitor dielectric layer is not derived from a barrier material from which is formed the first barrier layer. The capacitors provide enhanced thermal interdiffusion stability and enhanced oxidation stability.
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