| 摘要 |
A photodiode photosensor for use in a CMOS imager exhibiting improved infrared response. The photosensor is a diode with an infrared sensitive silicide layer, such as an iridium silicide, formed on a doped substrate. The infrared sensitive silicide is highly sensitive to infrared radiation, especially in the deep infrared spectral range. A reflective layer may be used on the infrared sensitive silicide layer so that infrared radiation entering the diode from the bottom is reflected back to the photodiode. Also disclosed are processes for forming the photodiode.
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