发明名称 |
Semiconductor memory and method for fabricating the same |
摘要 |
Semiconductor memory and method for fabricating the same, the semiconductor memory including a cell transistor having a trench region formed in a semiconductor substrate and channel regions at sides of the trench region, source/drain regions formed in a bottom of the trench region and in a surface of the substrate adjacent to the trench region and in contact with the channel region, and gate electrodes at sides of the trench insulated from the trench wall.
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申请公布号 |
US6465299(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000629099 |
申请日期 |
2000.07.31 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
SON WON SO |
分类号 |
H01L27/10;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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