发明名称 |
Via filled dual damascene structure with middle stop layer and method for making the same |
摘要 |
An interconnect structure and method of forming the same in which a first inorganic low k dielectric material is deposited over a conductive layer to form a first dielectric layer. An etch stop layer is formed on the first dielectric layer. The etch stop layer and the first dielectric layer are etched to form a via in the first dielectric layer. A second low k dielectric material is deposited within the via and over the etch stop layer to form a second dielectric layer over the via and the etch stop layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. A portion of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
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申请公布号 |
US6465340(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20010776734 |
申请日期 |
2001.02.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG FEI;OKADA LYNNE A.;SUBRAMANIAN RAMKUMAR;GABRIEL CALVIN T. |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
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