| 摘要 |
A semiconductor device has improved reverse recovery characteristics and has greatly reduced the leakage current caused during application of a reverse bias voltage. The semiconductor device according to the invention includes a semiconductor chip having a first major surface and a second major surface facing opposite to the first major surface; an anode electrode on the first major surface; and a cathode electrode on the second major surface. The semiconductor chip includes a first laminate structure, a second laminate structure and a third laminate structure arranged in parallel to each other, the second laminate structure being interposed between the first laminate structure and the third laminate structure. The first laminate structure, the second laminate structure and the third laminate structure commonly possess a cathode layer of a first conductivity type contacting the cathode electrode and a drift layer of the first conductivity type on the cathode layer, the drift layer being doped more lightly than the cathode layer.
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