发明名称 |
Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage |
摘要 |
A method is disclosed to form a split-gate flash memory cell having nitride spacers formed on a pad oxide and prior the forming of an inter-poly oxide layer thereover. In this manner, any damage that would normally occur to the inter-poly oxide during the etching of the nitride spacers subsequent to the forming of the inter-poly oxide is avoided. Consequently, the variation in the thickness of the inter-poly oxide due to the unpredictable damage to the underlying spacers is also avoided by reversing the order in which the spacers and the inter-poly oxide are formed, including the forming of the pad oxide first. As a result, variation in the erase speed of the inter-gate flash memory cell is prevented, both for cells fabricated on the same wafer as well as on different wafers on same or different production lines.
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申请公布号 |
US6465841(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000709589 |
申请日期 |
2000.11.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HSIEH CHIA-TA;LIN YAI-FEN;SUNG HUNG-CHENG;YEH JACK;KUO DI-SON |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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