Growing transition metal nitride thin films by using compound having hydrocarbon, amino or silyl group bound to nitrogen as nitrogen source material

摘要

Transition metal nitride thin films are grown on substrate using alternate surface reactions of metal and nitrogen source materials. The nitrogen material is a compound with a hydrocarbon, amino or silyl group bound to nitrogen. The group generates a radical that serves as a reducing agent and/or reacts to generate atomic hydrogen when it dissociates in homolytically from nitrogen. An Independent claim is also included for a method of producing an electrically conductive diffusion barrier layer on a substrate comprising integrated circuits between a conductor and an isolation layer, comprising introducing the integrated circuit comprising conductors into the reaction space of an atomic layer deposition reactor, and growing a conductive metal nitride thin film on the integrated circuit using the inventive method.