| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device, by forming a proper contact between its wiring and its semiconductor layer. SOLUTION: The semiconductor device has a semiconductor film 8 formed on an insulation substrate, where its thickness is not larger than 1,500Åand its main component is silicon, a wiring connected electrically with the semiconductor film, and a film connected electrically with the semiconductor film via the wiring, whose main component is a conductive oxide. The wiring has a first layer 11 which has titanium as its main component, a second layer 15 having aluminum as its main component, and a third layer 16 having titanium as its main component. The first layer 11 is brought into contact with the semiconductor film 8. The second layer 15 is formed between the first layer 11 and the third layer 16.</p> |
