发明名称 |
Simultaneous formation of charge storage and bitline to wordline isolation |
摘要 |
One aspect of the present invention relates to a method of forming a non-volatile semiconductor memory device, involving the sequential or non-sequential steps of forming a charge trapping dielectric over a substrate, the substrate having a core region and a periphery region; removing at least a portion of the charge trapping dielectric in the periphery region; forming a gate dielectric in the periphery region; forming buried bitlines in the core region; and forming gates in the core region and the periphery region.
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申请公布号 |
US6465306(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000723635 |
申请日期 |
2000.11.28 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED |
发明人 |
RAMSBEY MARK T.;YANG JEAN Y.;SHIRAIWA HIDEHIKO;VAN BUSKIRK MICHAEL A.;ROGERS DAVID M.;SUNKAVALLI RAVI;WANG JANET;DERHACOBIAN NARBEH;WU YIDER |
分类号 |
H01L21/8247;H01L21/8246;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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