发明名称 |
Method for preparation of diamond film |
摘要 |
In subjecting a substrate of low electric conductivity to a pretreatment by holding the same within a fluidized bed of diamond particles for the formation of a diamond film on the substrate surface, a treatment method is disclosed which is capable of preventing decrease in the effect of the pretreatment. The pretreatment of the substrate is conducted within a fluidized bed of diamond particles by keeping the electrostatic potential of the substrate in the range from -1.5 to +1.5 kV. It is desirable that the relative humidity of the gas for the fluidization of diamond particles is controlled to be 40% or higher. It is more desirable that ion bombardment onto the substrate surface to effect neutralization of the electrostatic charges. The fluidizing gas is humidified preferably by using a bubbling apparatus or spraying apparatus.
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申请公布号 |
US6465049(B2) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000741431 |
申请日期 |
2000.12.21 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NOGUCHI HITOSHI;KUBOTA YOSHIHIRO |
分类号 |
H01L21/027;C23C16/02;C23C16/26;C23C16/27;(IPC1-7):B05D1/22 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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