发明名称 |
Flash memory cell and method of manufacturing |
摘要 |
There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration non-volatile memory device.
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申请公布号 |
US6465833(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US19990474371 |
申请日期 |
1999.12.29 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JUNG SUNG MUN;SIM SUNG BO;KIM KWI WOOK |
分类号 |
H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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