发明名称 |
Method of manufacturing a flash memory device |
摘要 |
There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that expensive photograph equipments are required and the manufacturing costs are thus increased when defining a floating gate and a control gate in a flash memory cell used in a high-integration flash memory device, the present invention performs an etching process for defining a floating gate with an-isotropic etching process. Therefore, it can minimize the areas of a cell and thus obtain a high-integration device.
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申请公布号 |
US6465302(B1) |
申请公布日期 |
2002.10.15 |
申请号 |
US20000722030 |
申请日期 |
2000.11.27 |
申请人 |
HYUNDAI ELECTRONIC INDUSTRIES CO., LTD. |
发明人 |
AHN BYUNG JIN;CHANG HEE HYUN;LEE JU YEAB |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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