发明名称 |
Vertical split gate field effect transistor (FET) device |
摘要 |
Within both a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is formed within a semiconductor substrate a trench within whose sidewall is fully contained a channel region within the split gate field effect transistor (FET) device. Similarly, there is also formed within the split gate field effect transistor a floating gate electrode within the trench and covering within the trench a lower sub-portion of the channel region. Finally, the floating gate electrode in turn has formed vertically and horizontally overlapping thereover within the trench a control gate electrode which covers an upper sub-portion of the channel. The split gate field effect transistor (FET) device is fabricated with enhanced areal density and enhanced performance.
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申请公布号 |
US6465836(B2) |
申请公布日期 |
2002.10.15 |
申请号 |
US20010821199 |
申请日期 |
2001.03.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LIN CHRONG JUNG;TSAO SHENG-WEI;KUO DI-SON;YEH JACK;CHU WEN-TING;CHANG CHUNG-LI;HSIEH CHIA-TA |
分类号 |
H01L29/423;H01L29/788;(IPC1-7):H01L29/788 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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