Method of generating address configurations for solid state memory

摘要

A method involves the use of a sequence of address configurations covering L memory lines and n address lines. The method includes forming L blocks. A most significant column of each block is filled with the sequence such that the most significant column of each block contains the same unshifted sequence. A least significant column of each block is filled with the sequence such entries in the least significant column of the blocks are shifted cyclically. The L blocks contain address configurations for L2 memory lines and 2n address lines.