| 摘要 |
PURPOSE: A method for manufacturing a semiconductor laser diode is provided not to reduce an amount of injected current by overetching with a ridge etch mask having a wide width in comparison with that of a conventional etch mask and to improve a film quality of current limit layer by etching the side of the ridge into a sloped surface(not curved surface), thereby improving an electric characteristics and a radiation efficiency. CONSTITUTION: A method for manufacturing a semiconductor laser diode includes the steps of: forming an n-type clad layer(12) on a GaAs substrate(11); forming an active layer(13) for generating a light on the n-type clad layer(12); forming a p-type first clad layer(14), an etch stop layer(15) and a p-type second clad layer on the active layer(13), subsequently; forming a mask layer having a predetermined configuration on the p-type second clad layer; exposing the etch stop layer(15) by wet etching the p-type second clad layer, and then forming the p-type second clad layer into a ridge shape of p-type second clad layer(17) by preceding the wet etching; forming a current limit layer(18) on the exposed etch stop layer(15) so as to expose the ridge shape of p-type second clad layer(17); and forming a p-type GaAs cap layer(19) in such a way that the p-type GaAs cap layer(19) is connected to the ridge shape of p-type second clad layer(17) on the top of the current limit layer(18).
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