| 摘要 |
PROBLEM TO BE SOLVED: To facilitate fine-lining of the resist pattern of a semiconductor device. SOLUTION: At first, a primary pattern 1 is formed on a substrate 2 using a chemically amplified resist. The primary pattern 1 is has a width thicker than that of a desired resist pattern. A reforming material 3 is applied onto a substrate such that the primary pattern 1 is covered and then baked. A reforming material 3 is diffused to the sidewall part of the primary pattern (part A) which is rendered soluble. Subsequently, it is rinsed and the soluble part of the primary pattern is removed together with the reforming material 3 thus fine-lining the resist pattern. |
