PROGRAMABLE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a memory device which can fully exhibit the functions of a volatile memory and a programmable non-volatile memory. SOLUTION: Programming voltage is applied to a DRAM memory cell consisting of word lines, bit lines, transistors, and capacitive storing devices to fully employ the functions of a non-volatile memory. Programming voltage varies permanently the voltage leak function of the capacitive storing device. Therefore, in this DRAM memory device, the voltage leak characteristics of a cell can be read out by measurements.