| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable fuse element structure that improves the moisture absorption resistance of a fuse element by interrupting moisture entering routes to circuits in the circumference of the element, and to provide a method of manufacturing the structure. SOLUTION: In this structure, a selectively oxidized film 13 and an oxide film 12 are formed on a silicon semiconductor substrate 11 and impurity diffusion layers 14 connected to circuit wiring (181) are formed on both sides of the film 13. A polysilicon fuse 151 is connected to the diffusion layers 14 through first-layer metals 183. A water absorption-resistant ring AHR is constituted of a polysilicon layer 152 patterned to surround at least the fuse 151, and a first-layer metal 182 connected to the polysilicon layer 152 through the opening area 172 of an interlayer insulating layer 16. In this embodiment, a second-layer metal 21 connected to the first-layer metal 182 through the opening area 20 of an interlayer insulating layer 19 is also added to this structure.
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