| 摘要 |
PURPOSE: A semiconductor device are provided to solve the problem of boron penetration, and the problem of device characteristic change, caused by a reducing atmosphere such as hydrogen contained in a gas used in device manufacturing, and to suppress the reaction between the high-K dielectric gate insulation film and the Si substrate, and reaction between the high-K dielectric gate insulation film and the gate electrode. CONSTITUTION: A semiconductor device comprises a channel area formed in a Si crystal layer(21), a gate insulation film formed on the channel area, containing a SiO layer that is formed on the Si crystal layer, a first SiN layer formed on the SiO layer, a dielectric metal oxide layer formed on the first SiN layer, and a second SiN layer formed on the dielectric metal oxide layer, and a gate electrode formed on the gate insulation film. |
