| 摘要 |
PURPOSE: A borderless contact formation method of semiconductor devices is provided to restrain a leakage current between metal interconnections and to prevent a degradation due to a stress of an etch stopper. CONSTITUTION: A gate electrode(17) is formed on an active region of a silicon substrate(11) defined by a field oxide(13). A buffer oxide(19) and an etch stopper(21) made of a nitride layer are sequentially formed on the resultant structure. A spacer stacked the buffer oxide and the etch stopper is formed at both sidewalls of the gate electrode(17) by sequentially etching the etch stopper and the buffer oxide. After forming a silicide film on the gate electrode, a first, a second and a third interlayer dielectrics(29,31,33) are sequentially formed on the resultant structure. Borderless contact holes(37,39) are formed by sequentially etching the third, second and first interlayer dielectrics.
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