| 摘要 |
<p>PROBLEM TO BE SOLVED: To overcome the problem that strict management is required in a cleaning process and a manufacturing environment to prevent a case where a reliable oxide film could not be formed since a gap is generated at the junction portion between aluminum foil and a silicon ball, marks and defects are generated in a granular semiconductor, and contamination is mixed. SOLUTION: In the photoelectric conversion apparatus, a number of one- conductivity-type hemispherical semiconductor particles are provided on a substrate having a conductive region on a surface, an insulating region is provided among the semiconductor particles, and an inverse-conductivity-type semiconductor layer is formed from the upper portion of the semiconductor particle to that of the insulating region. In this case, an angle set by the surface of the hemispherical semiconductor particle and the substrate should be 90 deg. or higher.</p> |
