| 摘要 |
PROBLEM TO BE SOLVED: To reduce occurrence of wiring penalty of a semiconductor memory. SOLUTION: An address input circuit 30 receives an input of an address signal. A drive circuit 31 drives a memory array in accordance with an address signal. A signal line 32 connects the address input circuit 30 to the drive circuit 31. A redundancy circuit 33 is arranged near the drive circuit 31, and replaces a defective line existing in the memory array by the other line including a redundancy line. A supply circuit 35 supplies information stored in a defective line information storing circuit 34 to the redundancy circuit 33 through the signal line 32. By using such constitution, an address signal and a defective line information can be transmitted by the common signal line 32, the number of wirings can be reduced and occurrence of wiring penalty can be reduced.
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