| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high drive current by forming a fine channel and shallow source and drain of nm order size by utilizing a heavily doped silicon layer of a source and drain junction without separate lithographic process as a diffusion source and increasing an effective width of the channel in the same area. SOLUTION: An ultrafine MOS transistor comprises an SOI substrate including a single crystal substrate 10, an oxide film 20 formed on the substrate 10 and a first single crystal silicon layer formed on the film 20, a first silicon conductive layer 31 formed by heavily doping the first single crystal silicon layer, a source junction 80, channel 41 and drain junction 90 formed on the first silicon conductive layer 31, a gate insulating film 70 formed at the first silicon conductive layer 31, the source/drain junction and channel, a second silicon conductive layer formed at the drain junction, and a gate electrode 101 formed at a sidewall of the vertical channel.
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