发明名称 |
SINGLE-ENDED HIGH-VOLTAGE LEVEL SHIFTER FOR GATE DRIVER FOR A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a single-ended high-voltage level shifter used for a gate driver of a thin film transistor liquid crystal display device that can further reduce a chip area of the gate driver so as to considerably reduce the manufacture cost of a gate driver IC. SOLUTION: The single-ended high-voltage level shifter comprises a high- voltage power supply VDD, a low-voltage power supply VSS, a 1st low-voltage NMOS transistor M7, a high-voltage NMOS transistor M2, and a 1st high- voltage MOS transistor M1. An input signal is applied at the gate of a 1st low-voltage NMOS transistor M7. The source of the high-voltage NMOS transistor M7 is connected to the low-voltage power supply VSS. The high-voltage NMOS transistor M2 has a first reference voltage applied at its gate. The source of the high-voltage NMOS transistor M2 is connected to the drain of the 1st low-voltage NMOS transistor M7. The 1st high-voltage PMOS transistor M1 has a second reference voltage applied at its gate. The second reference voltage keeps the high-voltage PMOS transistor M1 in ON-state. The drain of the high-voltage PMOS transistor M1 is connected to the drain of the high- voltage NMOS transistor M2.
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申请公布号 |
JP2002300026(A) |
申请公布日期 |
2002.10.11 |
申请号 |
JP20010197899 |
申请日期 |
2001.06.29 |
申请人 |
CENTURY SEMICONDUCTOR INC |
发明人 |
YO ZONKO;CHAO CHIN-CHIEH;WANG CHIEN-KUO |
分类号 |
G09G3/20;G09G3/36;H03K19/0185;(IPC1-7):H03K19/018 |
主分类号 |
G09G3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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