| 摘要 |
PROBLEM TO BE SOLVED: To realize improvement of low frequency noise characteristics and heat resistance simultaneously in the same chip. SOLUTION: The semiconductor device comprises a first GaAs layer 4 formed on the upper surface of an epitaxial substrate layer 1, a first diode electrode 8 formed on the upper surface side thereof, and an FET gate electrode 5. A diode/FET electrode 9 is formed between the diode electrode 8 and the FET gate electrode 5 on the upper surface side of the first GaAs layer 4. The diode/ FET electrode 9 forms a second diode electrode for the first diode electrode 8 and a source or drain electrode for the FET gate electrode. The first diode electrode 8 is formed by deposition and the FET electrode 5 is formed by sputtering. Highly reliable heat resistance and improvement of low frequency noise characteristics of an FET are realized simultaneously in the same chip by forming the first diode electrode 8 and the FET electrode 5 having different physical properties.
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