发明名称 CIRCUIT AND METHOD FOR GENERATING VOLTAGE
摘要 PURPOSE: A circuit and a method for generating a voltage are provided to remove the phenomenon of counter-current of a voltage generation node to a pumping node by interrupting current flow between a pumping node and a voltage transmission control node. CONSTITUTION: A control signal generation circuit for controlling a boosting operation of a high voltage generation circuit is formed with the first and the second delay circuits(10,12), NOR gates(NOR1,NOR2), the first and the second level shifters(14,16), a NAND gate(NA1), a plurality of inverters(I1 to I8), NMOS capacitors(NC1,NC2), and NMOS transistors(N3,N4,N5). A precharge circuit for precharging signals(n8,n10,n13) is formed by the NMOS transistors(N3,N4,N5). The first booster circuit for boosting the signal(n10) of a pumping node is formed by an NMOS capacitor(NC3) and an NMOS transistor(N5). The second booster circuit for boosting the signal(n10) of the pumping node is formed by an NMOS capacitor(NC4). An NMOS capacitor(NC5) is used for boosting the signal(n13) in an active operation. An NMOS transistor(N7) is used for transmitting the signal(n10) of the pumping node to a high voltage generation node. A drain of an NMOS transistor(N6') is connected with the signal(n10). A gate of the NMOS transistor(N6') is connected with the signal(n6).
申请公布号 KR20020076433(A) 申请公布日期 2002.10.11
申请号 KR20010016261 申请日期 2001.03.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, SEONG JIN
分类号 G11C5/14;H02M3/07;(IPC1-7):G11C5/14 主分类号 G11C5/14
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