| 摘要 |
PURPOSE: A method of forming isolation trenches between active regions for an E2PROM cell is provided to form the isolation regions between active regions in the memory cell. CONSTITUTION: A self-aligned method of forming isolation and active regions in a semiconductor device includes the steps of forming a layer of first material on a semiconductor substrate(30), forming a plurality of spaced apart trenches that extend through the layer of first material and into the substrate, forming a first layer of insulating material along sidewall portions of the trenches, filling the trenches with an insulating material, removing the layer of first material to expose portions of the substrate, forming a second layer of insulating material on the exposed portions of the substrate, and forming a layer of conductive material on the second layer of insulating material.
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