发明名称 ELECTRON BEAM EXPOSING RETICLE BLANK MANUFACTURING METHOD AND MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide an electron beam exposing reticle blank manufacturing method which easily forms silicon struts having a uniform strut width in the uniform depth direction, and the preside a mask. SOLUTION: The electron beam exposing reticle blank manufacturing method intended to manufacture an electron beam exposing reticle blank composed of a plurality of membranes and a grid-like silicon strut part 18a supporting them comprises a step of preparing an SOI wafer composed of a silicon thin film layer 16, a silicon oxide layer 17 and a silicon support substrate 18, a step of electrical discharge machining of the support substrate 18 for forming the half-finished grid-like silicon strut part 18a and a step of dry-etching the support substrate with the silicon oxide layer 17 used as an etching stopper to completely finish the grid-like silicon strut part 18a.</p>
申请公布号 JP2002299229(A) 申请公布日期 2002.10.11
申请号 JP20010104439 申请日期 2001.04.03
申请人 NIKON CORP 发明人 KATAKURA NORIHIRO
分类号 B44C1/22;G03F1/20;H01L21/027;H01L21/302;H01L21/3065;(IPC1-7):H01L21/027;H01L21/306;G03F1/16 主分类号 B44C1/22
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