| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable nonvolatile semiconductor memory, and its fabricating method, in which the rewritable number of times can be increased by reducing charge damage of a floating gate at the time of fabricating a split gate type flash memory cell. SOLUTION: A floating gate FG on a gate oxide film 11 is formed by patterning using the selectively oxidized part 12 of a polysilicon layer as a mask. A control gate CG is formed by patterning from above a part of the floating gate FG to the vicinity of one side part through a gate oxide film 14. The floating gate FG side where at least the upper part is not covered with the control gate CG is coated with a protective film 15 having an etch selectivity different from that of an oxide film 16 being formed latter by plasma etching thus suppressing charge damage due to plasma.
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