| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin-film structural unit free from warpage. SOLUTION: This manufacturing method for a thin-film structural unit includes (1) a process in which substrate separation layers 3a and 3b are formed in a substrate (Si wafer) 1 having first and second main surface in a reaction chamber, (2) a process in which a first epitaxial growth layer 5a made of a material different from the material of the Si wafer 1 and second epitaxial growth layer 5b made of a material different from the materials of the first layer 5a and the Si substrate 1 are deposited simultaneously on the first main surface and the second main surface, respectively, in the same reaction chamber, and (3) a process in which the Si wafer 1 is separated by using the substrate separation layers 3a and 3b to obtain first and second independent thin-film structural units 8a and 8b which include the first and second epitaxial growth layers 5a and 5b, respectively. As hetero-epitaxial growth layers are deposited simultaneously on the first and second main surface of the substrate, warpages caused by a difference in lattice constaints and heat expansion coefficients cancel each other, so that the high quality epitaxial growth layers 5a and 5b can be obtained.
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