| 摘要 |
PURPOSE: To efficiently carry out a series of processes for group-by-group RIE processing of a plurality of Si substrate groups, by using the same RIE device. CONSTITUTION: The manufacturing method for a semiconductor device has the series of processes using the same RIE device for the group-by-group RIE processing of the Si substrate groups A1 to A20; the processing history of a certain Si substrate group Aj (j=j+1) to be processed next is checked, prior to the RIE processing of one Si substrate group Ai (i=1-19) is completed to decide what type of RIE processing is to be conducted, and when the RIE processing of the same type continues, the RIE processing of the next Si substrate group Aj is carried out without plasma cleaning. |
