| 摘要 |
<p>PURPOSE: A semiconductor device formed on a multiple substrate is provided to precisely stack two different semiconductor substrates, by preventing a decrease of yield caused by misalignment without additional process or cost. CONSTITUTION: The first device is formed in the first semiconductor substrate(30). The first interlayer dielectric(31) covers the first device and the first semiconductor substrate. The first interconnection is formed on the first interlayer dielectric, connected to the first device. The first bonding pad(32A) is formed on the first interlayer dielectric. An alignment key(32B) is formed on the first interlayer dielectric. The second device is formed in the second semiconductor substrate(40). The second interlayer dielectric(41) covers the second device and the second semiconductor substrate. The second interconnection is formed on the second interlayer dielectric, connected to the first device and the first interconnection. The second bonding pad(42) is formed on the second interlayer dielectric. An alignment hole is formed in the second interlayer dielectric and the second semiconductor substrate, confronting the alignment key.</p> |
