METHOD FOR CRYSTALLIZING SILICON LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

PURPOSE: A method for crystallizing a silicon wafer and a method for fabricating a semiconductor device by using the same are provided to improve a crystallizing speed of silicon by controlling a kind and density of a dopant implanted into silicon. CONSTITUTION: An amorphous silicon layer(41) as an active layer is formed on a substrate(40). The amorphous silicon layer(41) is patterned. A gate insulating layer(42) and a gate electrode(43) are formed on the patterned amorphous silicon layer(41). A source(41C) and a drain region(41D) of the active layer are doped by using the gate electrode(43) as a mask. An MILC(Metal Induced Lateral Crystallization) metal layer is formed on the source(41C) and the drain region(41D) of the active layer in order to induce MILC of the active layer. The crystallization of the active layer is induced by performing a thermal process. A contact hole is formed by forming and patterning a contact insulating layer.