ETCHING METHOD AND APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an etching method and an etching apparatus which ensure stable etch rate. SOLUTION: While a specified gas is introduced from a gas feeder 2 into a vacuum chamber 1, a turbomolecular pump 3 which is an evacuation means evacuates this chamber to keep a fixed pressure therein and a high frequency power source 4 feeds a coil 6 disposed inside a dielectric tube 5 a high-frequency power of 13.56 MHz to generate a plasma in the chamber 1, thereby etching a high melting point metal film, formed on a substrate 8 mounted on a substrate electrode 7 with the plasma.