| 摘要 |
PROBLEM TO BE SOLVED: To prevent decline in performance and reliability of a semiconductor integrated circuit device specifically due to degasification of a TEOS/CVD silicon oxide film on the rear face of a semiconductor substrate, in the semiconductor integrated circuit device and a method of manufacturing the same. SOLUTION: As the method of manufacturing a semiconductor integrated circuit device, the following is suggested: coating the TEOS/CVD silicon oxide film on the rear face of the semiconductor substrate with another insulation film; providing no TEOS/CVD silicon oxide film on the rear face of the semiconductor substrate; removing the TEOS/CVD silicon oxide film on the rear face of the semiconductor substrate; and forming the TEOS/CVD silicon oxide film on the rear face of the semiconductor substrate in such a thin film thickness as to hold down the generation of degasification on or below an allowable value. |
