发明名称 SUBSTRATE FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate of good productivity for a semiconductor device and a method for manufacturing the semiconductor device, where resin repulsion near the corner of a dam is eliminated. SOLUTION: A substrate for a semiconductor device is provided where a plurality of circuit patterns capable of mounting a semiconductor element 5 are formed on an insulating board separable into individual semiconductor devices 31 after resin sealing with a liquid resin. With a material having a contact angle to the liquid resin smaller than the insulating board comprised, a film 12 which frames the circuit pattern is coated, and a dam 11 is superposed or circumscribed to the film 12 with the film 12 exposed inside the dam 11.</p>
申请公布号 JP2002299509(A) 申请公布日期 2002.10.11
申请号 JP20010095082 申请日期 2001.03.29
申请人 NEW JAPAN RADIO CO LTD 发明人 MONMA AKIO
分类号 H01L23/28;H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/28
代理机构 代理人
主权项
地址