| 摘要 |
PURPOSE: To provide a method of forming a trench isolation structure, which is suitable to miniaturize elements and can obtain excellent element properties by preventing any groove formed at the periphery of the trench structure. CONSTITUTION: This method comprises a step for forming a mask layer containing a nitride film on a semiconductor substrate and forming a fixed opening pattern on the mask layer, a step for forming a trench by etching the exposed portion of the semiconductor substrate using the mask layer as a mask, a step for forming a thermal oxide film in the inner wall of the trench, a step for forming an insulation film as an etching barrier on the whole of the main face of the semiconductor substrate, a step for forming a nitride film liner on the insulation film, a step for forming a buried insulation film in order to bury the trench, a step for planerizating the nitride film of the mask layer so as to be exposed, and a step for removing the mask layer by isotropic etching.
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