发明名称 |
THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A thin film transistor liquid crystal display and a method for manufacturing the same are provided to increase operating current and decrease leakage current by controlling the thickness of first and second silicon films of an active layer, thereby obtaining the optimum characteristics of a thin film transistor. CONSTITUTION: A method for manufacturing a thin film transistor liquid crystal display includes the steps of forming a gate electrode(13a) on a transparent insulating board(11), forming a gate insulating film(15) and an active layer(17) formed of a double film of first and second silicon films(17a,17b) having different resistance, forming source and drain electrodes(21a,21b) by evaporating a metal film for source and drain electrodes and patterning the metal film thereafter, forming a protective film(23) on the transparent insulating board in which the source and drain electrodes are formed and forming a via hole disclosing a predetermined part of the source electrode, and forming a pixel electrode(25) on the protective film to be contacted with the disclosed source electrode.
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申请公布号 |
KR20020076934(A) |
申请公布日期 |
2002.10.11 |
申请号 |
KR20010017169 |
申请日期 |
2001.03.31 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
PARK, JAE CHEOL;RYU, MYEONG GWAN |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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地址 |
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