发明名称 MAGNETORESISTIVE DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of the conventional element, that hot electrons which go over a tunnel layer are necessary to ballistically transmit at least four layers or more of non-magnetic or magnetic layer comprising a base part, so that the gain of an emitter current to a collector current becomes degraded to a very poor level. SOLUTION: A least one conductive layer, two tunnel layers and at least two magnetic layers are laminated and at least one of the tunnel layers is pinched with the two magnetic layers and its resistance is changed due to the magnetized relative angle of the magnetic layers being changed. In such a tunnel magnetoresistive layer, at least one of the tunnel lavers one which will not be changed, regardless of the changes in magnetized relative angle.
申请公布号 JP2002299725(A) 申请公布日期 2002.10.11
申请号 JP20010098655 申请日期 2001.03.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRAMOTO MASAYOSHI;MATSUKAWA NOZOMI;SUGITA YASUNARI;SATOMI MITSUO;KAWASHIMA YOSHIO;ODAKAWA AKIHIRO
分类号 G01R33/09;G11B5/39;G11C11/14;G11C11/15;H01L21/8246;H01L27/105;H01L43/08 主分类号 G01R33/09
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