| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten the program time of a flash memory and to reduce the chip area. SOLUTION: This non-volatile semiconductor memory has a boosting circuit 7 used at the time of write or erase of data and for generating voltage being higher than external power source voltage, a boosting circuit 9 used at the time of read of data and for generating voltage being higher than external power source voltage, regulators 5, 6 connected to the output 38 of the boosting circuit 7 and for controlling voltage used for write or erase, and a reference voltage generating circuit 8 for generating reference voltage 39 inputted to the regulators 5, 6. The power source of the reference voltage generating circuit 8 and the output of the boosting circuit 9 are connected through a transistor, and a transistor is made conductive immediately after the start of write or erase of data.</p> |
