SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BARRIER FORMED BETWEEN METAL PATTERN AND INTERLAYER DIELECTRIC AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device including a diffusion barrier formed between a metal pattern and an interlayer dielectric and a method for fabricating the same are provided to prevent contraction of a metal pattern by forming a diffusion barrier between floating oxide layers formed between the metal pattern and the metal pattern. CONSTITUTION: An interlayer dielectric(10) is formed on a semiconductor substrate. A metal pattern(12) is formed on the interlayer dielectric(10). A fire-resistant metal layer is formed on a whole surface of the semiconductor substrate. A spacer(14) is formed on a sidewall of the metal pattern(12). A thermal process is performed on the semiconductor substrate during 10 minutes to 3 hours. A diffusion barrier(16) is formed by combining oxygen component of the spacer(14) with metallic component of the metal pattern(12). A floating oxide layer(18) is formed thereon. The thermal process is performed on the floating oxide layer(18).