| 摘要 |
PURPOSE: A method for driving a ferroelectric memory device sharing a cell plate between neighboring cells and a ferroelectric device thereof are provided to prevent effectively a data disturbance between the neighboring cells by removing a voltage difference between the voltage of a storage node of the neighboring cell and the voltage of the cell plate. CONSTITUTION: The first cell(CELL0) is driven by the first word line(WL0). The second cell(CELL1) is driven by the second word line(WL1). A cell plate(CP0_1) is formed between the first and the second cells(CELL0,CELL1). The first and the second cells(CELL0,CELL1) are connected with the same bit line(BL0). The first dummy word line(DWL0) is branched from the first word line(WL0). The second dummy word line(DWL1) is branched from the second word line(WL1). The first cell(CELL0) is formed with the first electrode, a ferroelectric layer, a ferroelectric capacitor(C), the first transistor(Tr1), and the second transistor(Tr2). The second cell(CELL1) is formed with the first electrode, a ferroelectric layer, a ferroelectric capacitor(C), the third transistor(Tr3), and the fourth transistor(Tr4).
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