| 摘要 |
PROBLEM TO BE SOLVED: To provide a chip type semiconductor device which adopts a method which enables bonding an electrode and a thermal stress buffering plate firmly without using a high-temperature solder containing a good amount of lead and which enables the employment of a newly developed low-temperature solder substitute since the solder substitute is not melted and therefore enables taking enough advantage of the action of the thermal stress buffering plate. SOLUTION: TRIAC, a chip type semiconductor device, comprises the device body 10 formed of silicon and electrodes 11 and 12 formed on one face of the device body 10. A molybdenum plate 30 is attached to the electrode 12 via an alloy plate 1 formed of aluminum and silicon, and a molybdenum plate 31 is attached to the other face of the device body 10 via the same type of alloy plate 2. On bonding faces of the molybdenum plates 30 and 31 with external electrode plates 40 and 41, nickel layers 3 and 4 are formed.
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