| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin ferroelectric film device which enables to prevent degradation of device characteristics due to the reduction of a thin ferroelectric film material, by controlling the crystallinity when forming a thin film functioning as a barrier against hydrogen on an upper electrode of a thin ferroelectric film capacitor, and also to provide the thin ferroelectric film device. SOLUTION: On a ferroelectric lead zirconate titanate (PZT) thin film 108 capacitor, a thin metal iridium film 109 preliminarily formed on a single- crystalline substrate with the crystallinity being controlled is transferred. Only the most upper surface of the thin metal iridium film is oxidized to form an iridium oxide film 110 having a good crystallinity, which is to be used as a barrier film against hydrogen.
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