| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which is advantageous to high speed read-out by relaxing restriction of channel width of a cell selecting transistor. SOLUTION: This device is provided with a plurality of MTJ elements 1, a write-in word line WWL giving write-in auxiliary magnetic field of data each of the plurality of MTJ elements 1, a plurality of bit lines BL connected to one end of each of the plurality of MTJ elements 1, a cell selection transistor 2 connected commonly to the other end of each of the plurality of MTJ elements 1, and a selection word line SWL driving the cell selection transistor 2.
|
