| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device, which has full reliability in practical use, when outputting a high light output of GaN-based blue- violet laser. SOLUTION: In the semiconductor light-emitting device, the position of the active layer is made different from the position which providing maximal light intensity distribution. As a result, since the maximal position of the light intensity distribution is shifted from that of the active layer, optical deterioration of the active layer can be suppressed.
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