| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables to form an opening for alignment mark shallow. SOLUTION: The semiconductor device comprises a bit line 6 formed on a semiconductor wafer 100, capacitor formed in a first opening 11 extended through an interlayer insulation film 10, an interlayer insulation film 14 coating the capacitor, an upper layer plug film 16 embedded in a contact hole 15 which is extended through the interlayer insulation films 14, 10, and 7 to the bit line 6, and an upper wiring layer film 17 formed on the upper layer plug film 16. In the semiconductor device, a bottom of a second opening 153 formed simultaneously with the contact hole 15 for forming an alignment mark to be utilized when patterning the upper wiring layer in film 17 is located above a bottom of the contact hole 15. |
